SCIENTISTS AT the University of Illinois claim to have broken their own record for creating the world's fastest transistor.
A device the Electrical and Computer Engineering Department at Illinois University has made a 509GHz transistor, and that's 57GHz faster than a previous transistor the boffins had put together.
The transistors are build from indium phosphide and indium gallium arsenide rather than silicon and germanium, the university said.
This system, claims Milton Feng, a professor in the department, is "inherently faster than silicon germanium and can support a much higher current density".
Feng claims that the research, funded by DARPA, will mean even faster transistors in the future – perhaps as fast as one terahertz. µ